3284693

Structural Comparison of the (3 -3 2n) and (3 -3 n) 2H, 4H and 6H Surfaces for Application to the Growth of AlGaN on Off-Axis 4H- and 6H-SiC Substrates

Jones, K.A.

2005

Dec. 7-9, 2005

300

301

Aluminum gallium nitride; Bonding; Crystalline materials; Crystallography; Epitaxial growth; Gallium arsenide; Lattices; Semiconductor films; Silicon carbide; Substrates;

English

ieee

Semiconductor Device Research Symposium, 2005 International

1-4244-0083-X

conf

10.1109/ISDRS.2005.1596104

1596104