DocumentCode
3284693
Title
Structural Comparison of the (3 -3 2n) and (3 -3 n) 2H, 4H and 6H Surfaces for Application to the Growth of AlGaN on Off-Axis 4H- and 6H-SiC Substrates
Author
Jones, K.A.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
300
Lastpage
301
Keywords
Aluminum gallium nitride; Bonding; Crystalline materials; Crystallography; Epitaxial growth; Gallium arsenide; Lattices; Semiconductor films; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596104
Filename
1596104
Link To Document