DocumentCode :
3284708
Title :
Determining the ion angular distribution of bulk titanium DRIE with overhang SU-8 mask
Author :
Hu, Jia ; Yan, Bo ; Li, Nannan ; Chen, Jing
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
fYear :
2011
fDate :
20-23 Feb. 2011
Firstpage :
1108
Lastpage :
1111
Abstract :
As an emerging technology, bulk titanium DRIE enabled devices are very attractive for in vivo and harsh environments applications. As the functionality, mobility and reliability of the micro components highly depend on the quality of microstructures, a physical etching model is necessary for better control of the DRIE profile, in which knowledge of the ion angular distribution in chlorine plasma is critical. In this report, an overhang SU-8 mask was designed and fabricated for the etching experiments, Al was deposited between two SU-8 layers to allow for separation. The etched profiles were measured by white light interferometry, which derived the ion angular distribution by data analyzing. With this distribution, a preliminary etching model was developed that could be used to forecast and optimize the titanium DRIE.
Keywords :
SU(8) theory; masks; semiconductor device reliability; sputter etching; DRIE profile; bulk titanium DRIE enabled device; chlorine plasma; data analysis; deep reactive ion etching; etching model; functionality; ion angular distribution; microstructures; mobility; overhang SU-8 mask; reliability; white light interferometry; Etching; Iterative closest point algorithm; Optical interferometry; Plasmas; Substrates; Titanium; etching rate model; ion angular distribution; lag effect; overhang SU-8; titanium DRIE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
Type :
conf
DOI :
10.1109/NEMS.2011.6017550
Filename :
6017550
Link To Document :
بازگشت