High Current [200 A], Low Resistance (0.87 mΩ-cm₂) Normally-off SiC VJFETs for Power Switching Applications

Author

Stewart, E.J. ; Walker, A.P. ; McNutt, T.R. ; Van Campen, S.D. ; Hearne, H.C. ; Knight, T.J. ; McCoy, M.J. ; Veliadis, V. ; Bates, G.M. ; DeSalvo, G.C.

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

306

Lastpage

307

Keywords

Doping; Etching; Fabrication; Implants; Packaging; Power transistors; Silicon carbide; Switches; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

DOI

10.1109/ISDRS.2005.1596108

Filename

1596108

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