DocumentCode :
3284738
Title :
High Current [200 A], Low Resistance (0.87 mΩ-cm
2
) Normally-off SiC VJFETs for Power Switching Applications
Author :
Stewart, E.J. ; Walker, A.P. ; McNutt, T.R. ; Van Campen, S.D. ; Hearne, H.C. ; Knight, T.J. ; McCoy, M.J. ; Veliadis, V. ; Bates, G.M. ; DeSalvo, G.C.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
306
Lastpage :
307
Keywords :
Doping; Etching; Fabrication; Implants; Packaging; Power transistors; Silicon carbide; Switches; Thermal conductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596108
Filename :
1596108
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284738
