DocumentCode :
3284774
Title :
Capacitance-Voltage Hysteresis Effects in Metal-SiO2-Thin Film Organic Semiconductor Devices
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
312
Lastpage :
313
Keywords :
Capacitance-voltage characteristics; Hysteresis; Organic semiconductors; Polarization; Semiconductor films; Semiconductor thin films; Temperature; Thermodynamics; Thin film devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596111
Filename :
1596111
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284774
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