DocumentCode
3284774
Title
Capacitance-Voltage Hysteresis Effects in Metal-SiO2-Thin Film Organic Semiconductor Devices
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
312
Lastpage
313
Keywords
Capacitance-voltage characteristics; Hysteresis; Organic semiconductors; Polarization; Semiconductor films; Semiconductor thin films; Temperature; Thermodynamics; Thin film devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596111
Filename
1596111
Link To Document