A Microshield RF MEMS Shunt Switch

Author

Nithianandam, Jeyasingh ; Samson, Satish N. ; Zakar, Eugene

Author_Institution

Dept. of ECE, Morgan State Univ., Baltimore, MD

fYear

2005

fDate

7-9 Dec. 2005

Firstpage

322

Lastpage

323

Abstract

We propose a capacitive shunt switch based on the inverted microshield transmission line. A 0.1 mumm thick aluminum nitride film covering an area of 149.1 times 150 mum² can be deposited on the signal metal strip. A thin gold beam of thickness 1.5 mum, width of 150 mum and length of 370 mum is fixed on both ends with two gold anchors of height 3 mum. We performed FEM simulations on the MEMS switch with HFSS. The scattering parameters of open and closed MEMS shunt switch. The insertion loss is less than 0.94 dB and the isolation is about 80 dB around 35 GHz. The capacitive MEMS shunt switch based on the inverted microshield line can be fabricated with low resistivity silicon. It has excellent high frequency performance and it has some advantages over conventional microshield transmission lines (Dib and Katehi, 1992)

Keywords

aluminium compounds; finite element analysis; microswitches; transmission lines; 0.1 micron; 1.5 micron; 150 micron; 3 micron; 370 micron; AlN; FEM simulations; RF MEMS shunt switch; aluminum nitride film; capacitive MEMS shunt switch; insertion loss; inverted microshield transmission line; scattering parameters; Aluminum nitride; Gold; Insertion loss; Micromechanical devices; Microswitches; Radiofrequency microelectromechanical systems; Scattering parameters; Strips; Switches; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Conference_Location

Bethesda, MD

Print_ISBN

1-4244-0083-X

Type

conf

DOI

10.1109/ISDRS.2005.1596116

Filename

1596116