• DocumentCode
    3284921
  • Title

    Efficient Approach to Optimization of fγ for Graded-Base SiGe HBTs

  • Author

    Ai, Lei ; Cheng, Ming-Cheng

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    332
  • Lastpage
    333
  • Keywords
    Bipolar transistors; Capacitance; Computer science; Delay effects; Doping; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596121
  • Filename
    1596121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3284921