DocumentCode :
3284921
Title :
Efficient Approach to Optimization of fγ for Graded-Base SiGe HBTs
Author :
Ai, Lei ; Cheng, Ming-Cheng
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
332
Lastpage :
333
Keywords :
Bipolar transistors; Capacitance; Computer science; Delay effects; Doping; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596121
Filename :
1596121
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284921
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