Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM

Author

Sudirgo, S. ; Pawlik, D.J. ; Rommel, Sean L. ; Kurinec, S.K. ; Thompson, P.E. ; Berger, P.R.

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

334

Lastpage

335

Keywords

Current density; Diodes; Germanium silicon alloys; Logic; Low voltage; Random access memory; Resonance; Silicon germanium; Tin; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

DOI

10.1109/ISDRS.2005.1596122

Filename

1596122

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