Title :
Modeling and Simulation of Narrowband Gap Semiconductor Indium Antimonide (InSb) Based MOSFET
Author :
Ma, L. ; Jin, Y.-W. ; Zeng, C. ; Barlage, D.W.
Keywords :
Electron mobility; Equations; III-V semiconductor materials; Indium; Leakage current; MOS devices; MOSFET circuits; Narrowband; Semiconductor materials; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596124
