Title :
New, process tolerant, high performance 1.55 /spl mu/m polarization insensitive semiconductor optical amplifier based on low tensile bulk GaInAsP
Author :
Emery, J.-Y. ; Doussiere, P. ; Goldstein, L. ; Pommereau, F. ; Fortin, C. ; Ngo, R. ; Tscherptner, N. ; Lafragette, J.-L. ; Aubert, P. ; Brillouet, F. ; Laube, Marcoussis F G ; Barrau, Stuttgart G J
Author_Institution :
Alcatel Corp. Res. Centre, Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
We demonstrate a polarization independent semiconductor optical amplifier using low tensile bulk separate confinement heterostructure. Internal gain as high as 30 dB with polarization sensitivity lower than 1 dB is obtained in a structure with 0.15% tensile strain.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical transmitters; quantum well lasers; sensitivity; /spl mu/m polarization insensitive semiconductor optical amplifier; 1.55 mum; 30 dB; GaInAsP; high performance; internal gain; low tensile bulk GaInAsP; low tensile bulk separate confinement heterostructure; polarization independent semiconductor optical amplifier; polarization sensitivity; process tolerant; tensile strain;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
