DocumentCode :
3284991
Title :
Characterization of compositional oscillations in InGaAs films induced by MBE cell configuration and substrate rotation
Author :
Sarney, W.L. ; Svensson, S.P.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
340
Lastpage :
341
Keywords :
Fluctuations; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Semiconductor films; Semiconductor superlattices; Shape; Substrates; Temperature; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596125
Filename :
1596125
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284991
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