Title :
Deposition and electrical characterisation of a MOS memory structure containing AU nanoparticles in a high-k dielectric layer
Author :
Sargentis, Ch ; Giannakopoulos, K. ; Travlos, A. ; Tsamakis, D. ; Krokidis, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., National Tech. Univ. of Athens
Abstract :
In this work, we use the MBE method in order to fabricate MOS memory devices with gold (Au) nanoparticles embedded on a SiO2/HfO2 interface. We have chosen to work with Au nanoparticles due to the fact that Au has a large work function. The device shows a clear hysteresis behavior on C-V (capacitance-voltage) and G-V (conductance-voltage) measurements. These measurements demonstrate that in our device we have a charge storage effect. When we apply a positive voltage to the gate, electrons tunnel through the thin SiO2 layer and are stored in the metallic nanoparticles. This MOS device shows a clear memory effect
Keywords :
MOS memory circuits; dielectric hysteresis; gold; hafnium compounds; high-k dielectric thin films; molecular beam epitaxial growth; nanoparticles; silicon compounds; MBE; MOS memory devices; SiO2-HfO2-Au; capacitance-voltage measurement; charge storage effect; clear memory effect; conductance-voltage measurements; deposition characterization; electrical characterisation; high-k dielectrics; hysteresis behavior; metallic nanoparticles; work function; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Gold; Hafnium oxide; High-K gate dielectrics; Hysteresis; Nanoparticles; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596126
