Title :
High performance strained layer integrated laser-modulator for 20 Gbit/s transmission
Author :
Ramdane, A. ; Delprat, D. ; Ougazzaden, A. ; Sorel, Y. ; Kerdiles, J.F. ; Henry, M. ; Thebault, C.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
20 Gbit/s transmission without power penalty over 108 km of dispersion shifted fiber is reported with a strained layer InGaAsP QW DFB laser-electroabsorption modulator. The device is integrated using a very simple approach that yields high static and dynamic performance.
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical transmitters; quantum well lasers; semiconductor quantum wells; 108 km; 20 Gbit/s; Gbit/s transmission; InGaAsP; dispersion shifted fiber; dynamic performance; high performance strained layer integrated laser-modulator; high static performance; power penalty; strained layer InGaAsP QW DFB laser-electroabsorption modulator;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
