Title :
Two-Dimensional Quantum Mechanical Modeling for Multiple-Channel FinFET
Author :
Kim, Joong-sik ; Won, Taeyoung
Author_Institution :
Dept. of Electr. Eng., Nat. IT Res. Center for Computational Electron., Incheon
Abstract :
In this paper, we report our preliminary study on the 2D quantum-mechanical modeling of multiple-channel FET through solving the coupled Poisson-Schrodinger equations for a multiple-channel FET structure in a self-consistent manner. Our simulation revealed that the drain current driving capability as well as the transconductance for multiple-channel FETs was tremendously improved when compared to FinFETs. The simulation results also revealed that the short-channel effects are more effectively suppressed with comparison to the conventional FinFETs
Keywords :
MOSFET; Poisson equation; Schrodinger equation; semiconductor device models; 2D quantum mechanical modeling; Poisson-Schrodinger equations; drain current driving capability; multiple-channel FinFET; short-channel effects; CMOS process; FETs; FinFETs; Immune system; Nanostructures; Poisson equations; Quantum computing; Quantum mechanics; Schrodinger equation; Transconductance;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596127
