DocumentCode :
3285036
Title :
Growth of sprayed nanostructured copper (I) iodide (CuI) thin films at different precursor solution concentration
Author :
Amalina, M.N. ; Rusop, M.
Author_Institution :
NANO-Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear :
2011
fDate :
19-20 Dec. 2011
Firstpage :
339
Lastpage :
342
Abstract :
In this research, the effect of precursor concentration of CuI thin film deposited by spraying technique was studied. The CuI concentration varies from 0.05 M to 0.5 M. The CuI solution was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The deposition takes 15 min for 50 ml at a constant temperature of 50°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. The Urbach energy as calculated from transmittance spectra increased up to 0.1 M. The electrical properties indicates the decreased of conductivity as the concentration increased.
Keywords :
X-ray diffraction; copper compounds; electrical conductivity; mixing; nanofabrication; nanoparticles; semiconductor growth; semiconductor thin films; spraying; CuI; Urbach energy; X-ray diffraction; XRD; acetonitrile solvent; electrical conductivity; electrical properties; mixing; nanostructured copper iodide thin films; p-type semiconductor material; powder; precursor solution concentration; spraying; structural properties; temperature 50 degC; time 15 min; transmittance spectra; Conductivity; Current measurement; Optical films; Spraying; Substrates; X-ray scattering; CuI thin films; Electrical properties; Optical properties; Solution Concentration; Spraying;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research and Development (SCOReD), 2011 IEEE Student Conference on
Conference_Location :
Cyberjaya
Print_ISBN :
978-1-4673-0099-5
Type :
conf
DOI :
10.1109/SCOReD.2011.6148761
Filename :
6148761
Link To Document :
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