Title :
On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels
Author :
Miyaji, Kousuke ; Kobayashi, Masaharu ; Ohtou, Tetsu ; Saitoh, Masumi ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
Abstract :
In this paper, we compare our model to conventional master equation method as stated in M. Saitoh et al. (2004) and C. W. J. Beenaker (1991) and discuss the accuracy of our model more quantitatively. The proposed compact analytical SET model with discrete quantum energy levels is verified by the conventional master equation method. Our model provides sufficient accuracy in RT operating applications without using any numerical solutions. It is suitable for large-scale circuit simulations utilizing NDC of RT operating SETs
Keywords :
semiconductor device models; silicon; single electron transistors; analytical model; discrete quantum energy levels; large-scale circuit simulations; master equation; room-temperature operation; silicon single-electron transistors; Analytical models; Circuit simulation; Energy states; Equations; Quantum dots; Silicon; Single electron transistors; Stationary state; Temperature; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596129
