DocumentCode
3285090
Title
Powerful semiconductor laser bars on 950 nm for pulse energy greater 200MJ
Author
Goorov, Michael G. ; Dmitriev, Alexander K.
Author_Institution
Inst. of Laser Phys., SB RAS, Novosibirsk
Volume
01
fYear
2008
fDate
23-25 Sept. 2008
Firstpage
77
Lastpage
79
Abstract
In present work the possibility of manufacturing, of semiconductor laser bars with emitting power up to 50 W at a wavelength of 950 nanometers with an injection current pulse duration up to 4 msec with high duty factor is shown.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; AlGaAs-GaAs; emitting power; high duty factor; injection current pulse duration; manufacturing; power 50 W; pulse energy; semiconductor laser bars; wavelength 950 nm; Bars; Indium gallium arsenide; Laser theory; Optical pulses; Optical pumping; Optical waveguides; Power lasers; Pump lasers; Semiconductor lasers; Surface emitting lasers; laser; power; pulse energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-2825-0
Type
conf
DOI
10.1109/APEIE.2008.4897062
Filename
4897062
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