A 45-GHz Si/SiGe 256-QAM transmitter with digital predistortion

Author

Po-Yi Wu ; Youjiang Liu ; Hanafi, Bassel ; Dabag, Hayg ; Asbeck, Peter ; Buckwalter, James

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

3

Abstract

The operation of a 45-GHz, Silicon/Silicon Germanium transmitter chipset including a 2×2 power amplifier (PA) array and an I/Q modulator with digital predistortion (DPD) linearization is demonstrated. The 2×2 PA array is implemented in a 45-nm SOI CMOS process and feeds a 2×2 antenna array implemented on a printed circuit board (PCB). The I/Q modulator is implemented in a 120-nm SiGe BiCMOS process where the LO input and RF output are also wire-bonded to a PCB and is programmed through an FPGA to compensate I/Q imbalance and LO leakage. The Si/SiGe transmitter chipset achieves 2.67% EVM at 9.375-MS/s symbol rate with 256-QAM, and 3.68% EVM at 25-MS/s symbol rate with 64-QAM. It produces an average EIRP of 28.6 dBm and consumes 1.7 W from the PA and 322 mW from the I/Q modulator after DPD.

Keywords

CMOS integrated circuits; Ge-Si alloys; antenna arrays; millimetre wave power amplifiers; power amplifiers; quadrature amplitude modulation; GeSi; I/Q modulator; QAM transmitter; SOI CMOS process; antenna array; digital predistortion linearization; frequency 45 GHz; power 1.7 W; power 322 mW; power amplifier array; printed circuit board; size 120 nm; size 45 nm; transmitter chipset; Antenna arrays; Antenna feeds; CMOS integrated circuits; Linearity; Semiconductor device measurement; Silicon; Switches; I/Q modulator; Millimeter-wave; antenna array; digital predistortion; power amplifiers; spatial combining;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166824

Filename

7166824