Title :
A Subthreshold Drain Current Model for Deep Submicron Pocket Implanted MOSFETs
Author :
Baishya, S. ; Mallik, A. ; Sarkar, C.K.
Keywords :
CMOS technology; Doping; Logic circuits; MOSFETs; Power engineering and energy; Predictive models; Semiconductor process modeling; Subthreshold current; Telecommunications; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596135
