DocumentCode :
3285291
Title :
First Principle Study of Si and Ge Band Structure for UTB MOSFETs Applications
Author :
Low, Tony ; Feng, Y.P. ; Li, M.-F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P. ; Chan, L. ; Kwong, D.L.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
384
Lastpage :
385
Keywords :
Atomic layer deposition; Effective mass; Lattices; Linear discriminant analysis; MOSFETs; Photonic band gap; Semiconductor films; Semiconductor thin films; Thin film devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596147
Filename :
1596147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285291
