A new consideration of correlation between external noise sources in HEMT two-temperature model

We consider the correlation between equivalent gate and drain noise sources in the two-temperature model to demonstrate a better compatibility between measured noise parameters (y_opt, R_n , F_min) and the results from simulation. The originality of the contribution lies in considering correlation between external input and output equivalent noise temperatures ( T_in and T_out) for a transistor. Danneville´s model has been used with two additional constants (real and imaginary parts of correlation) which has a better agreement with measurements. A two stage MMIC compatible HEMT low noise amplifier at Ka-band, which could be used for local multipoint distribution systems (LMDS) and fixed satellite services (FSS), has been designed and the effect on its noise figure of noise sources´ correlation has been considered. A low noise amplifier in Ka-band has been designed, and the proposed model applied to it. The results of the simulation have been compared in three cases.