DocumentCode :
3285362
Title :
The Impact of InAlAs Spacer Layer on DC Characteristics of InP/InAlAs/GaAsSb/InP DHBTs
Author :
Cho, S.W. ; Park, M.S. ; Kim, T.-W. ; Jang, J.H. ; Adesida, I. ; Pan, N.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
394
Lastpage :
395
Keywords :
Double heterojunction bipolar transistors; Electron emission; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Radiative recombination; Semiconductor materials; Spontaneous emission; Surface resistance; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596152
Filename :
1596152
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285362
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