DocumentCode
3285362
Title
The Impact of InAlAs Spacer Layer on DC Characteristics of InP/InAlAs/GaAsSb/InP DHBTs
Author
Cho, S.W. ; Park, M.S. ; Kim, T.-W. ; Jang, J.H. ; Adesida, I. ; Pan, N.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
394
Lastpage
395
Keywords
Double heterojunction bipolar transistors; Electron emission; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Radiative recombination; Semiconductor materials; Spontaneous emission; Surface resistance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596152
Filename
1596152
Link To Document