Title :
Development silicon of nanotechnology and technology of plasma etching silicon
Abstract :
Summary form only given. The analysis of prospects of development nanoelectronics and silicon nanotechnology is carried out. The information on a condition of works on manufacturing integrated microcircuits on technological norms 32, 45, 51, 55 and 60 nm is resulted. The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The model of plasma chemical of etching of silicon in plasma CCl2F2/O2 in conditions of active delivery CAP is constructed at the expense of etching of teflon polymer.
Keywords :
carbon compounds; nanoelectronics; polymers; silicon; sputter etching; CCI2F2-O2; integrated microcircuits; nanoelectronics; plasma chemical etching; plasma etching silicon; quartz reactor; silicon nanotechnology; teflon polymer; Etching; Inductors; Manufacturing; Nanoelectronics; Nanotechnology; Plasma applications; Plasma chemistry; Plasma materials processing; Polymers; Silicon;
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
DOI :
10.1109/APEIE.2008.4897088
