DocumentCode :
3285474
Title :
A 40W ultra broadband LDMOS power amplifier
Author :
Kaldi Li ; Tiefeng Shi ; Song Di ; Yin, William
Author_Institution :
Freescale Semicond. Inc., Shanghai, China
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
An ultra-broadband power amplifier using a Freescale 50V LDMOS device is presented. The power amplifier can deliver 40W PEP power from 2 to 800 MHz with better than 30dBc IM3 at 10 kHz 2-tone spacing. The power gain is 19 dB with ± 1 dB gain flatness across the band at class A operation and 15 dB ± 1 dB gain flatness at class AB configuration, each with a 36 V supply voltage. The drain efficiency is better than 30% from 2 MHz to 1 GHz. The impedance matching technique utilizes a two-section broadband balun impedance transformer with ferrite beads which allow the device to operate at low frequency down to 2MHz, and a series R-C feedback loop to improve the gain flatness. The broadband matching methodology based on the non-linear model is introduced as well.
Keywords :
UHF power amplifiers; baluns; ferrites; impedance convertors; Freescale LDMOS device; class A operation; class AB configuration; ferrite beads; frequency 2 MHz to 1 GHz; gain 19 dB; impedance matching; impedance transformer; power 40 W; series R-C feedback loop; two-section broadband balun; ultrabroadband LDMOS power amplifier; voltage 36 V; voltage 50 V; Broadband amplifiers; Power amplifiers; Power amplifiers; broadband amplifier; linear power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166842
Filename :
7166842
Link To Document :
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