Title :
Adjustment of bipolar transistors models parameters
Abstract :
It is proposed algorithm constructing three grid data, compact and high accuracy describing bipolar transistor model behaviour in large signal mode, in widely currents scope.
Keywords :
bipolar transistors; semiconductor device models; bipolar transistors; grid data; large signal mode; model parameters; parameter adjustment; Bipolar transistors; Etching; Nanotechnology; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma temperature; Silicon; Temperature measurement;
Conference_Titel :
Electronic Instrument Engineering, 2008. APEIE 2008. 9th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4244-2825-0
DOI :
10.1109/APEIE.2008.4897090
