DocumentCode :
3285510
Title :
Impact Ionization Rate of the Bulk FinFETs with Fin Width and Bias Conditions
Author :
Kim, Sang-Yun ; Baek, Kwang-Ho ; Han, Kyoung-Rok ; Choi, Byung-Kil ; Lee, Jong-Ho
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
408
Lastpage :
409
Keywords :
CMOS technology; Computer science; Electrons; FinFETs; Hot carrier effects; Immune system; Impact ionization; MOSFETs; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596159
Filename :
1596159
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285510
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