DocumentCode
3285510
Title
Impact Ionization Rate of the Bulk FinFETs with Fin Width and Bias Conditions
Author
Kim, Sang-Yun ; Baek, Kwang-Ho ; Han, Kyoung-Rok ; Choi, Byung-Kil ; Lee, Jong-Ho
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
408
Lastpage
409
Keywords
CMOS technology; Computer science; Electrons; FinFETs; Hot carrier effects; Immune system; Impact ionization; MOSFETs; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596159
Filename
1596159
Link To Document