DocumentCode :
3285586
Title :
Characterization of Polysilicon-Oxide-Nitride-Oxide-Silicon (SONOS) Nonvolatile Semiconductor Memory (NVSM) Devices
Author :
Wang, Xiaonan ; Wang, Yu ; Chabalko, Matthew J. ; White, Marvin H. ; Wrazien, Stephen J.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
418
Lastpage :
419
Keywords :
Nonvolatile memory; SONOS devices; Semiconductor memory; Space vector pulse width modulation; Testing; Thickness measurement; Threshold voltage; Tunneling; Velocity measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596164
Filename :
1596164
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285586
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