Title :
Influence of SOI-generated stress on BiCMOS performance
Author :
Johansson, Ted ; Malm, B. Gunnar ; Norström, Hans ; Smith, Ulf ; Östling, Mikael
Keywords :
BiCMOS integrated circuits; Capacitance; Capacitive sensors; Compressive stress; Diffusion tensor imaging; Etching; Information technology; Laboratories; Materials science and technology; Microelectronics;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596177
