DocumentCode :
3285811
Title :
Simulation Study of Source/Drain Doping Profile for 10nm Gate Length Fully Depleted N-type SOI MOSFET
Author :
Jin, Yawei ; Ma, Lei ; Zeng, Chang ; Barlage, Doug
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
448
Lastpage :
449
Keywords :
Capacitance; Computational modeling; Degradation; Doping profiles; Electrodes; Electron devices; Immune system; MOSFET circuits; Silicon; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596179
Filename :
1596179
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285811
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