Title :
Basic Study of Plasma Wave Interactions in GaAs Interdigital- Gated HEMT Devices from Microwave up to THz Frequencies
Author :
Hashim, Abdul Manaf ; Kasai, Seiya ; Hasegawa, Hideki ; Hashizume, Tamotsu
Author_Institution :
Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
Abstract :
The purpose of this paper is to investigate theoretically and experimentally possible interactions between the surface plasma wave in drifting carriers in 2D electron gas (2DEG) and electromagnetic space harmonics in a GaAs interdigital-gated HEMT device from microwave to THz frequencies
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; plasma waves; two-dimensional electron gas; 2D electron gas; GaAs; THz frequency; electromagnetic space harmonics; interdigital-gated HEMT; microwave frequencies; plasma wave interactions; surface plasma wave; Admittance measurement; Fingers; Frequency; Gallium arsenide; HEMTs; Microwave devices; Permittivity; Plasma devices; Plasma waves; Surface waves;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596180
