DocumentCode :
32859
Title :
Backing gallium nitride
Volume :
49
Issue :
14
fYear :
2013
fDate :
July 4 2013
Firstpage :
852
Lastpage :
852
Abstract :
Back barriers have been shown to improve the performance of GaN HEMTs and dispersion at 4 GHz is possible for free-standing examples.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; GaN; HEMT; back barrier; carbon-doped layer; free-standing gallium nitride; frequency 4 GHz; low-threading dislocation density substrates; proximity effects; three-terminal breakdown;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.2074
Filename :
6557236
Link To Document :
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