• DocumentCode
    3285974
  • Title

    Selective oxidized porous silicon (SOPS) substrate for microwave power chip-packaging

  • Author

    Choong-Mo Nam ; Young-Se Kwon

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon
  • fYear
    1996
  • fDate
    28-30 Oct 1996
  • Firstpage
    202
  • Lastpage
    204
  • Abstract
    Selective oxidized porous silicon (SOPS) substrate for microwave power chip-packaging is implemented by selective anodization and oxidation process. SOPS substrate provides low dissipation factor, higher thermal conductivity, low fabrication cost and high-performance-passive elements like inductors in microwave frequency
  • Keywords
    MMIC; anodisation; elemental semiconductors; inductors; integrated circuit packaging; oxidation; porous materials; power integrated circuits; silicon; substrates; thermal conductivity; Si; Si-SiO2; high-performance-passive elements; inductors; low dissipation factor; low fabrication cost; microwave power chip-packaging; selective anodization process; selective oxidation process; selective oxidized porous Si substrate; thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging, 1996., IEEE 5th Topical Meeting
  • Conference_Location
    Napa, CA
  • Print_ISBN
    0-7803-3514-7
  • Type

    conf

  • DOI
    10.1109/EPEP.1996.564831
  • Filename
    564831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285974