Title :
Selective oxidized porous silicon (SOPS) substrate for microwave power chip-packaging
Author :
Choong-Mo Nam ; Young-Se Kwon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon
Abstract :
Selective oxidized porous silicon (SOPS) substrate for microwave power chip-packaging is implemented by selective anodization and oxidation process. SOPS substrate provides low dissipation factor, higher thermal conductivity, low fabrication cost and high-performance-passive elements like inductors in microwave frequency
Keywords :
MMIC; anodisation; elemental semiconductors; inductors; integrated circuit packaging; oxidation; porous materials; power integrated circuits; silicon; substrates; thermal conductivity; Si; Si-SiO2; high-performance-passive elements; inductors; low dissipation factor; low fabrication cost; microwave power chip-packaging; selective anodization process; selective oxidation process; selective oxidized porous Si substrate; thermal conductivity;
Conference_Titel :
Electrical Performance of Electronic Packaging, 1996., IEEE 5th Topical Meeting
Conference_Location :
Napa, CA
Print_ISBN :
0-7803-3514-7
DOI :
10.1109/EPEP.1996.564831
