The board implementation for checking SEU test on memory devices

The major problem encountered in nuclear plant and space applications is EMI (electro-magnetic interference) and EMC (electro-magnetic compatibility). Here, our locus is to implement the test board for SEU (single event upset) of checking the effects of protons on the electronic system. The SEU results from the level change of stored information due to photon radiation and temperature in the space environment. The impact of SEU on PLD (programmable logic devices) technology is most apparent in ROM/SRAM/DRAM devices wherein the state of storage cell can be upset. In this paper, a simple and powerful test techniques is suggested, and the results are presented for the analysis and future reference. In our experiment, the proton radiation facility (50 MeV with a beam current of 60 μA of cyclotron) available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on commercial grade SRAM and EPROM manufactured by Hynix Semiconductor Company.