A micromachined silicon capacitive temperature sensor for radiosonde applications

Author

Ma, Hong-Yu ; Huang, Qing-An ; Qin, Ming ; Lu, TingTing

Author_Institution

Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

1693

Lastpage

1696

Abstract

A novel silicon capacitive temperature sensor implemented with micromachined multilayer cantilevers is presented. The multi-layered sensor structure has been fabricated with SOI wafers by a 4-mask process. Using this structure, the low-power dissipation and wide temperature range can be achieved. For the present sensor, the temperature range is from -70Â°C to 100Â°C with the sensitivity of 7 fF/Â°C. This makes it suitable to serve as a temperature sensor for low-power and wide temperature range applications.

Keywords

cantilevers; capacitive sensors; micromachining; microsensors; multilayers; radiosondes; silicon-on-insulator; temperature sensors; SOI wafers; Si; low-power dissipation; micromachined multilayer cantilevers; micromachined silicon capacitive temperature sensor; multilayered sensor structure; radiosonde applications; temperature -70 degC to 100 degC; Capacitance; Capacitive sensors; Dielectric materials; Electrodes; Micromechanical devices; Nonhomogeneous media; Silicon; Temperature distribution; Temperature sensors; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2009 IEEE

Conference_Location

Christchurch

ISSN

1930-0395

Print_ISBN

978-1-4244-4548-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2009.5398513

Filename

5398513