Title :
Design considerations for monolithic Si-based RF VCOs in wireless single-chip systems
Author :
Raman, Sanjay ; Sanderson, David I. ; Klein, Adam S.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The paper discusses a number of important considerations in the design of differential VCO known as -GM LC-tank VCO in Si technologies. The availability of multiple interconnect layers, culminating in a thick electroplated Cu (bump) layer, has led to significant improvements in the Q-factor of tank circuit inductors. In addition, the use of symmetric differential inductor structures can result in substantial improvements in Q through the enhancement of mutual coupling.
Keywords :
Q-factor; copper; microwave oscillators; silicon; thick film inductors; voltage-controlled oscillators; Q-factor; bump layer; differential VCO; monolithic RF VCO; multiple interconnect layers; mutual coupling; silicon-based RF VCO; symmetric differential inductor structures; tank circuit inductors; thick electroplated copper layer; wireless single-chip systems; BiCMOS integrated circuits; Germanium silicon alloys; Inductors; Q factor; Radio frequency; Silicon germanium; System-on-a-chip; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Wireless Communication Technology, 2003. IEEE Topical Conference on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-8196-3
DOI :
10.1109/WCT.2003.1321474
