Title :
BSIM5 MOSFET Model
Author :
Xi, Xuemei ; He, Jin ; Dunga, Mohan ; Wan, Hui ; Chan, Mansun ; Lin, Chung-Hsun ; Heydari, Babak ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
This paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSFM4´s accurate modeling of numerous device behaviors attributable to device physics or technologies.
Keywords :
CMOS integrated circuits; semiconductor device models; silicon-on-insulator; BSIM5 MOSFET model; CMOS technology; SOI; double-gate MOSFET; CMOS technology; Electronics industry; Helium; Hydrodynamics; MOSFET circuits; Manufacturing industries; Physics; Radio frequency; Semiconductor device manufacture; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436657
