• DocumentCode
    3286422
  • Title

    Experimental study on the dielectrostriction of SiO2 with a micro-fabricated cantilever

  • Author

    Huang, Jian-Qiu ; Huang, Qing-An ; Qin, Ming ; Dong, Wei-Jie ; Chen, Xiao-Wei

  • Author_Institution
    Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    1030
  • Lastpage
    1033
  • Abstract
    The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M12, was developed and special samples for the measurements were fabricated. According to the measurements the dielectrostriction coefficient, M12, of thermal SiO2 is -0.19 ± 0.01 × 10-21m2/V2.
  • Keywords
    cantilevers; electrostriction; microfabrication; permittivity; silicon compounds; SiO2; beam bending; dielectric constant; dielectrostriction; mechanical stresses; microfabricated cantilever; sandwich structure; Capacitance; Capacitive sensors; Capacitors; Deformable models; Dielectric constant; Dielectric measurements; Mechanical sensors; Sandwich structures; Testing; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398528
  • Filename
    5398528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3286422