Extracting the model parameters of non-ideal junctions based on explicit analytical solutions of I-V characteristics

We present a new method to extract the intrinsic and extrinsic model parameters of semiconductor junctions containing parasitic resistance and shunt conductance. The method, which is based on a previously defined Integral Difference Function D uses the exact explicit analytical solutions of the I-V characteristics. The presence of Lambert W function terms in the explicit analytical solutions would make parameter extraction by direct numerical fitting cumbersome. However, the resulting D is reduced to a purely algebraic equation from whose coefficients the intrinsic and extrinsic model parameters are then readily determined. The procedure is illustrated for four cases of parasitic series resistance-shunt conductance combinations, and applied to synthetic l-V characteristics to illustrate the computation process.