Title :
Highly oriented La doped (K, Na)NbO3 ferroelectric thin films
Author :
Vendrell, X. ; Mestres, L. ; Raymond, O. ; Ochoa, D.A. ; García, J.E.
Author_Institution :
Dept. of Inorg. Chem., Univ. de Barcelona, Barcelona, Spain
Abstract :
Lead-free (K0.5Na0.5)1-3xLaxNbO3 (x = 0.0-0.005) thin films were synthesized by chemical solution deposition. The X-ray analysis showed that (K0.5Na0.5)NbO3 (KNN) and La doped KNN single-phase thin films were obtained with a [100] preferred orientation. When doping with La, thin films exhibited a remarkably low leakage current and higher dielectric properties.
Keywords :
X-ray diffraction; dielectric losses; ferroelectric ceramics; ferroelectric thin films; lanthanum compounds; leakage currents; liquid phase deposition; permittivity; potassium compounds; sodium compounds; texture; (K0.5Na0.5)1-3xLaxNbO3; X-ray analysis; [100] preferred orientation; chemical solution deposition; dielectric properties; doping; highly oriented lead-free ferroelectric thin films; leakage current; Ceramics; Chemicals; Dielectric constant; Films; Lead; Substrates; K0.5Na0.5NbO3; ferroelectric properties; lead-free thin films; sol-gel process;
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
DOI :
10.1109/ISAF.2012.6297793
