Title :
InGaAs channel HEMTs for photonic frequency double mixing conversion over the sub-THz band
Author :
Kawasaki, T. ; Sugawara, K. ; Dobroiu, A. ; Wako, H. ; Watanabe, T. ; Suemitsu, T. ; Ryzhii, V. ; Iwatsuki, K. ; Kuwano, S. ; Kani, J. ; Terada, J. ; Otsuji, T.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We report on photonic frequency double-mixing conversion utilizing an InGaAs channel HEMT. A 1-GHz modulation signal on a 112.5-GHz carrier is electrically input to the gate, whereas a 1.58-μm dual wavelength CW laser beam having a frequency difference of 87.5-GHz local signal are irradiated to the channel. The InGaAs HEMT works as a photomixer generating a 87.5-GHz local signal which is then electrically mixed to the 5-GHz modulated 112.5-GHz carrier signal, resulting in the down-conversion of the 5-GHz signal to a 25-GHz intermediate frequency (IF) band.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; laser beams; millimetre wave mixers; optical harmonic generation; InGaAs; InGaAs channel HEMT; dual wavelength CW laser beam; frequency 1 GHz; frequency 112.5 GHz; frequency 25 GHz; frequency 5 GHz; frequency 87.5 GHz; photomixer; photonic frequency double mixing conversion; sub-THz band; wavelength 1.58 mum; Frequency conversion; Frequency modulation; Optical device fabrication; Optical fibers; Optical modulation; Photonics; InGaAs channel HEMT; disaster-resilience; optical-wireless fusion network; photomixing;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7166896
