CMOS active inductor for low voltage and low power wireless applications

Author

Niranjan, Vandana ; Kumar, Ajit ; Jain, Shail Bala

Author_Institution

Dept. of Electron. & Commun. Eng., GGSIP Univ., Delhi, India

fYear

2013

fDate

26-28 July 2013

Firstpage

1

Lastpage

4

Abstract

The low-voltage design is an effective method to decrease power consumption in a circuit. In this paper, a compact CMOS active inductor circuit is proposed. The circuit is based on the gyrator-C approach with both transconductance stages realized by MOS transistors. The proposed inductor is suitable for low voltage operation as it has minimum number of transistors and none of them suffers from body effect. The dynamic body bias technique increases self resonant frequency of the inductor and offers low power dissipation. To validate the proposed circuit, simulation results are provided for 0.25 μm CMOS process at 1.2 V supply voltage.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; gyrators; inductors; low-power electronics; MOS transistor; compact CMOS active inductor circuit; dynamic body bias technique; gyrator-C approach; low voltage low power wireless application; power consumption; power dissipation; self resonant frequency; size 0.25 m; transconductance stage; voltage 1.2 V; Active inductors; CMOS integrated circuits; CMOS technology; Logic gates; MOSFET; Resonant frequency; Active inductor; CMOS RF integrated circuits; dynamic body bias; gyrators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Optical Communications Networks (WOCN), 2013 Tenth International Conference on

Conference_Location

Bhopal

ISSN

2151-7681

Print_ISBN

978-1-4673-5997-9

Type

conf

DOI

10.1109/WOCN.2013.6616190

Filename

6616190