Miniaturized liquid gallium field emission electron sources for vacuum microelectronics

Author

Ishikawa, J. ; Gotoh, Y. ; Fujita, N. ; Nishikawa, S. ; Tsuji, H.

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

fYear

1996

fDate

7-12 Jul 1996

Firstpage

34

Lastpage

38

Abstract

Miniaturized liquid gallium field emission electron sources have been fabricated for the purpose of developing a new cathode for vacuum microelectronics. Gallium is evaporated on the base emitter which was fabricated by wet etch of silicon wafer, followed by deposition of tungsten thin film in order to improve wettability. Electron emission characteristics were measured, and both lowered threshold voltage and lower noise as compared with those of tungsten deposited emitters were observed

Keywords

cathodes; electron field emission; electron sources; gallium; liquid metals; vacuum microelectronics; Ga; cathode; electron emission; evaporation; fabrication; miniaturized liquid gallium field emission electron source; noise; silicon wafer; threshold voltage; tungsten thin film deposition; vacuum microelectronics; wet etching; wettability; Cathodes; Electron emission; Electron sources; Microelectronics; Noise measurement; Semiconductor thin films; Silicon; Sputtering; Tungsten; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601768

Filename

601768