Title :
Miniaturized liquid gallium field emission electron sources for vacuum microelectronics
Author :
Ishikawa, J. ; Gotoh, Y. ; Fujita, N. ; Nishikawa, S. ; Tsuji, H.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
Miniaturized liquid gallium field emission electron sources have been fabricated for the purpose of developing a new cathode for vacuum microelectronics. Gallium is evaporated on the base emitter which was fabricated by wet etch of silicon wafer, followed by deposition of tungsten thin film in order to improve wettability. Electron emission characteristics were measured, and both lowered threshold voltage and lower noise as compared with those of tungsten deposited emitters were observed
Keywords :
cathodes; electron field emission; electron sources; gallium; liquid metals; vacuum microelectronics; Ga; cathode; electron emission; evaporation; fabrication; miniaturized liquid gallium field emission electron source; noise; silicon wafer; threshold voltage; tungsten thin film deposition; vacuum microelectronics; wet etching; wettability; Cathodes; Electron emission; Electron sources; Microelectronics; Noise measurement; Semiconductor thin films; Silicon; Sputtering; Tungsten; Wet etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601768
