A H-Band vector modulator MMIC for phase-shifting applications

Author

Muller, D. ; Tessmann, A. ; Leuther, A. ; Zwick, T. ; Kallfass, I.

Author_Institution

Inst. of Radio Freq. Eng. & Electron., Karlsruhe Inst. of Technol., Karlsruhe, Germany

fYear

2015

fDate

17-22 May 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents a H-Band vector modulator which is optimized for phase shifting applications. The vector modulator is realized using a compact topology based on power dividers, baluns and variable gain amplifiers and shows state-of-the-art performance for frequencies between 235 and 270GHz with very low RMS gain and phase errors. In this frequency range the full 360° phase control range is achieved with less than 6.5 dB insertion loss. The MMIC was fabricated using a 50nm GaAs mHEMT technology and the resulting chip-size is only 1.25mm × 1.00 mm.

Keywords

III-V semiconductors; MMIC amplifiers; MMIC phase shifters; baluns; gallium arsenide; high electron mobility transistors; phase control; power dividers; GaAs; GaAs mHEMT technology; H-band vector modulator MMIC; RMS gain; baluns; compact topology; frequency 235 GHz to 270 GHz; phase control; phase errors; phase-shifting applications; power dividers; size 50 nm; variable gain amplifiers; Logic gates; Modulation; Semiconductor device measurement; GaAs; H-Band; MMIC; mHEMT; phase shifter; vector modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2015 IEEE MTT-S International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/MWSYM.2015.7166927

Filename

7166927