DocumentCode :
3287094
Title :
Atomic vapor deposition of bismuth titanate thin films
Author :
Deepak, Nitin ; Zhang, Panfeng ; Keeney, Lynette ; Pemble, Martyn E. ; Whatmore, Roger W.
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear :
2012
fDate :
9-13 July 2012
Firstpage :
1
Lastpage :
3
Abstract :
C-axis oriented ferroelectric bismuth titanate (Bi4Ti3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.
Keywords :
X-ray diffraction; atomic layer deposition; bismuth compounds; epitaxial layers; ferroelectric thin films; ferroelectricity; grain boundaries; transmission electron microscopy; (001) strontium titanate substrates; Bi4Ti3O12; C-axis oriented ferroelectric bismuth titanate epitaxial thin films; OPB density; SrTiO3; TEM analysis; X-ray diffraction data; XRD; atomic vapour deposition; out-of-phase grain boundaries; thin film growth; transmission electron microscopy; Bismuth; Epitaxial growth; Substrates; Surface morphology; Titanium; X-ray scattering; Ferroelectrics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
Type :
conf
DOI :
10.1109/ISAF.2012.6297829
Filename :
6297829
Link To Document :
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