Atomic vapor deposition of bismuth titanate thin films

Author

Deepak, Nitin ; Zhang, Panfeng ; Keeney, Lynette ; Pemble, Martyn E. ; Whatmore, Roger W.

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2012

fDate

9-13 July 2012

Firstpage

1

Lastpage

3

Abstract

C-axis oriented ferroelectric bismuth titanate (Bi₄Ti₃O₁₂) thin films were grown on (001) strontium titanate (SrTiO₃) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO₃ substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.

Keywords

X-ray diffraction; atomic layer deposition; bismuth compounds; epitaxial layers; ferroelectric thin films; ferroelectricity; grain boundaries; transmission electron microscopy; (001) strontium titanate substrates; Bi₄Ti₃O₁₂; C-axis oriented ferroelectric bismuth titanate epitaxial thin films; OPB density; SrTiO₃; TEM analysis; X-ray diffraction data; XRD; atomic vapour deposition; out-of-phase grain boundaries; thin film growth; transmission electron microscopy; Bismuth; Epitaxial growth; Substrates; Surface morphology; Titanium; X-ray scattering; Ferroelectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp

Conference_Location

Aveiro

Print_ISBN

978-1-4673-2668-1

Type

conf

DOI

10.1109/ISAF.2012.6297829

Filename

6297829