Title :
A 25-GHz 9-dB distributed amplifier in CMOS technology
Author :
Dang, Hua ; Zhong, Shun´an ; Chen, Yueyang ; Zhang, Qian
Author_Institution :
Sch. of Inf. & Electron., Beijing Inst. of Technol., Beijing, China
Abstract :
A common source single-ended distributed amplifier using 0.18-μm CMOS technology is presented in this paper. The four-stage DA demonstrates a relatively flat gain of 9.0 dB from 3.1GHz to 12.5GHz with less than 1.0dB ripple and a unity-gain bandwidth of 25.5GHz while the minimum value of noise figure is 3.6dB at 6.9GHz. Staggering technique is used to prevent instability. The proposed amplifier dissipates 158mW with a 1.8 V power supply.
Keywords :
CMOS analogue integrated circuits; distributed amplifiers; field effect MMIC; CMOS technology; common source single ended distributed amplifier; frequency 25.5 GHz; frequency 3.1 GHz to 12.5 GHz; gain 9 dB; noise figure 3.6 dB; power 158 mW; size 0.18 mum; voltage 1.8 V; Bandwidth; CMOS integrated circuits; CMOS technology; Distributed amplifiers; Inductors; Logic gates; Power transmission lines; Artificial Transmission Lines; CMOS RF Integrated Circuits; Distributed Amplifier; Staggering Technique;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5777969
