Title :
Yield modeling based on circular defect size and a real defect rectangular degree
Author :
Wang, Junping ; Hao, Yue ; Liu, Hongxia ; Jing, Minge
Author_Institution :
Res. Inst. of Microelectron., Xidian Univ., Xian, China
Abstract :
In the prediction model of yield and critical area available, the defect outline is usually assumed as circular. But the observations of real defects exhibit a great variety of defect shapes. The yield and the critical area predictions made by Monte Carlo techniques are realized and the relationship between error of yield predictions by circular defects and the rectangular degree of the defect is simulated. A more accurate yield model that takes the real defect shapes into account is presented, which calibrates for inaccuracy in defect size by the circular outline.
Keywords :
Monte Carlo methods; integrated circuit yield; Monte Carlo techniques; circular defect size; real defect rectangular degree; yield modeling; Circuit faults; Economic forecasting; Environmental economics; Integrated circuit modeling; Manufacturing; Microelectronics; Monte Carlo methods; Pollution measurement; Predictive models; Shape measurement;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1436706