DocumentCode
3287407
Title
Impact of sacrificial layer type on thin-film metal residual stress
Author
Garg, Anurag ; Small, Joshua ; Liu, Xiaoguang ; Mahapatro, Ajit K. ; Peroulis, Dimitrios
Author_Institution
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
25-28 Oct. 2009
Firstpage
1052
Lastpage
1055
Abstract
In this paper we study the impact of two sacrificial layers on the final residual stress of thin gold films. In particular, we compare a typical photoresist layer (Shipley SC1827) to single-crystalline silicon. We fabricate and measure cantilever beams on both sacrificial layers and study their residual stresses by analyzing the final displacement profile of the released beams. All samples were fabricated at the same time and under identical conditions. The study clearly shows that the induced stress on thin films is dependent on the sacrificial layer. The gold film deposited over the single-crystalline silicon shows nearly zero gradient stress after release. On the other hand, gradient stress dominates the gold film deposited during the same run but over a photoresist layer. Such results are very useful in designing and fabricating a wide variety of low-stress actuators and sensors.
Keywords
beams (structures); cantilevers; elemental semiconductors; gold; internal stresses; metallic thin films; micromechanical devices; photoresists; silicon; Au; Shipley SC1827; Si; cantilever beams; final displacement profile; low-stress actuators; photoresist layer; sacrificial layer; sensors; single-crystalline silicon; thin gold films; thin-film metal residual stress; zero gradient stress; Actuators; Displacement measurement; Gold; Residual stresses; Resists; Semiconductor films; Silicon; Stress measurement; Structural beams; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2009 IEEE
Conference_Location
Christchurch
ISSN
1930-0395
Print_ISBN
978-1-4244-4548-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2009.5398591
Filename
5398591
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