• DocumentCode
    3287407
  • Title

    Impact of sacrificial layer type on thin-film metal residual stress

  • Author

    Garg, Anurag ; Small, Joshua ; Liu, Xiaoguang ; Mahapatro, Ajit K. ; Peroulis, Dimitrios

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    1052
  • Lastpage
    1055
  • Abstract
    In this paper we study the impact of two sacrificial layers on the final residual stress of thin gold films. In particular, we compare a typical photoresist layer (Shipley SC1827) to single-crystalline silicon. We fabricate and measure cantilever beams on both sacrificial layers and study their residual stresses by analyzing the final displacement profile of the released beams. All samples were fabricated at the same time and under identical conditions. The study clearly shows that the induced stress on thin films is dependent on the sacrificial layer. The gold film deposited over the single-crystalline silicon shows nearly zero gradient stress after release. On the other hand, gradient stress dominates the gold film deposited during the same run but over a photoresist layer. Such results are very useful in designing and fabricating a wide variety of low-stress actuators and sensors.
  • Keywords
    beams (structures); cantilevers; elemental semiconductors; gold; internal stresses; metallic thin films; micromechanical devices; photoresists; silicon; Au; Shipley SC1827; Si; cantilever beams; final displacement profile; low-stress actuators; photoresist layer; sacrificial layer; sensors; single-crystalline silicon; thin gold films; thin-film metal residual stress; zero gradient stress; Actuators; Displacement measurement; Gold; Residual stresses; Resists; Semiconductor films; Silicon; Stress measurement; Structural beams; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398591
  • Filename
    5398591