Title :
Conductivity and optical absorption in Bi4Ti3O12 single crystals
Author :
Salazar-Kuri, U. ; Mendoza, M.E. ; Damjanovic, D. ; Setter, N.
Author_Institution :
Inst. de Fis., Benemerita Univ. Autonoma de Puebla, Puebla, Mexico
Abstract :
The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.
Keywords :
bismuth compounds; dielectric hysteresis; dielectric polarisation; electrical conductivity; energy gap; ferroelectric switching; hole mobility; optical microscopy; permittivity; vacancies (crystal); visible spectra; Bi4Ti3O12; activation energy; depoling; dielectric properties; dielectric switching; dominant electronic contribution; electrical conductivity; electron-hole charge movement; energy gap; frequency 100 mHz to 10 kHz; hysteresis loop; laser absorption; optical absorption; permittivity; polarized optical microscopy; single crystals; temperature 20 degC to 250 degC; vacancies; visible spectra; Absorption; Bismuth; Conductivity; Crystals; Frequency measurement; Hysteresis; Temperature measurement; Activation energy; Conductivity; Oxigen vacancies;
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
DOI :
10.1109/ISAF.2012.6297853
