DocumentCode
3287660
Title
A Theoretical Footing for Design Methodology and Practical Implementation of the Three-Phase Three-Level Rectifiers
Author
Brovanov, Sergey ; Lee, Hong-Hee ; Phan, Van-Tung ; Kharitonov, Sergey
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk
fYear
2006
fDate
26-28 Sept. 2006
Firstpage
180
Lastpage
185
Abstract
This paper presents a theoretical footing for analysis of the characteristics of three-phase three-level rectifiers. The proposed control strategy and structure of switches are based on the prototype of three bi-directional switches consisted of four diodes and one IGBT device. Much of attention in this paper is focused on the three-phase three-level rectifier implementation with the input and load characteristics under theoretical footing. The detailed methodology is explained clearly in this paper. The simulation results and experimental results fully verify the theoretical analysis that leads to significant overall efficiency.
Keywords
insulated gate bipolar transistors; power semiconductor switches; rectifying circuits; IGBT device; bi-directional switches; design methodology; diodes; three-phase three-level rectifiers; Design methodology; Diodes; IEC standards; Insulated gate bipolar transistors; Prototypes; Rectifiers; Switches; Switching circuits; Uninterruptible power systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering, 2006. APEIE '06. 8th International Conference on Actual Problems of
Conference_Location
Novosibirsk
Print_ISBN
5-7782-0662-3
Type
conf
DOI
10.1109/APEIE.2006.4292415
Filename
4292415
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