Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy

Author

Mizutani, T. ; Arakawa, M. ; Kishimoto, S.

Author_Institution

Dept. of Quantum Eng., Nagoya Univ., Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

31

Lastpage

34

Abstract

Kelvin probe force microscopy (KFM) was successfully applied to the measurement of the two-dimensional potential profile of the cleaved surface of GaAs HEMTs under bias voltage. The measured depth profile shows a potential knee which probably originates from the charge trapped at the interface between the epitaxial layer and the substrate. A high-field region is formed at the drain-side edge of the gate.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; high electron mobility transistors; surface potential; voltage measurement; AlGaAs-InGaAs-AlGaAs-GaAs; GaAs; GaAs HEMTs; Kelvin probe force microscopy; bias voltage; cleaved surface potential profile measurement; drain-side edge; epitaxial layer substrate interface; high-field region; potential knee; trapped charge; two-dimensional potential profile; Charge measurement; Current measurement; Force measurement; Gallium arsenide; HEMTs; Kelvin; MODFETs; Microscopy; Probes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553115

Filename

553115