Title :
Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy
Author :
Mizutani, T. ; Arakawa, M. ; Kishimoto, S.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
Kelvin probe force microscopy (KFM) was successfully applied to the measurement of the two-dimensional potential profile of the cleaved surface of GaAs HEMTs under bias voltage. The measured depth profile shows a potential knee which probably originates from the charge trapped at the interface between the epitaxial layer and the substrate. A high-field region is formed at the drain-side edge of the gate.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; high electron mobility transistors; surface potential; voltage measurement; AlGaAs-InGaAs-AlGaAs-GaAs; GaAs; GaAs HEMTs; Kelvin probe force microscopy; bias voltage; cleaved surface potential profile measurement; drain-side edge; epitaxial layer substrate interface; high-field region; potential knee; trapped charge; two-dimensional potential profile; Charge measurement; Current measurement; Force measurement; Gallium arsenide; HEMTs; Kelvin; MODFETs; Microscopy; Probes; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553115
