Title :
A model for tunneling-limited breakdown in high-power HEMTs
Author :
Somerville, M.H. ; del Alamo, J.A.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We present a new predictive model for off-state breakdown in InAlAs/InGaAs and AlGaAs/InGaAs power high electron mobility transistors (HEMTs). The proposed model suggests that electron tunneling from the gate edge, and not impact ionization, is responsible for off-state breakdown in these devices. The model indicates that the crucial variables in determining the off-state breakdown voltage of power HEMTs are the sheet carrier concentration in the extrinsic gate-drain region, and the gate Schottky barrier height. Other design parameters have only secondary impact on the breakdown voltage for realistic device designs.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; carrier density; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; semiconductor device models; tunnelling; AlGaAs-InGaAs; AlGaAs/InGaAs power high electron mobility transistors; InAlAs-InGaAs; InAlAs/InGaAs power high electron mobility transistors; breakdown voltage; electron tunneling; extrinsic gate-drain region; gate Schottky barrier height; gate edge; high-power HEMTs; microwave power applications; off-state breakdown; predictive model; sheet carrier concentration; temperature dependence; tunneling-limited breakdown; Electric breakdown; Electrons; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MODFETs; Predictive models; Schottky barriers; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553116
